Author: Dhruba Jyoti Gogoi1,2*
1Assistant Professor, Department of Physics, Moran College, Moranhat, Charaideo 785670, Assam, India
2Theoretical Physics Division, Centre for Atmospheric Studies, Dibrugarh University, Dibrugarh 786004, Assam, India
*Corresponding author: moloydhruba@gmail.com
Abstract
This study investigates the influence of nanostructure shape and size on magnetic fields induced by point charges near topological-insulator (TI) and ordinary-insulator (OI) interfaces. Employing the method of image dyons, this work explores the complex magnetic field behaviours that arise when charges are positioned within semiconductor quantum wells (QWs) encased by TIs, focusing on both centred and off-centred charge configurations. Notably, our results reveal the precise engineering of magnetic field configurations via the topological magnetoelectric effect (TME) and the profound impact of nanostructure geometry. Moreover, our study’s robustness is demonstrated through the close alignment of results with prior research. The findings open exciting avenues for innovative materials and device development in condensed matter physics and technology, showcasing the method of image dyons as a promising and reliable analytical tool for understanding complex magnetic field interactions in nanostructures near TI-OI interfaces.
Keywords
Topological Insulators; Topological Magnetoelectric Effect (TME); Semiconductor Quantum wells
